A new approach to on-chip probing in the MM-wave to THz range

One of the bigger obstacles in the development of THz devices and integrated circuits is their electrical characterization in the upper-millimeter to terahertz range above 100 GHz. Today's technology is mainly based on metal-to-metal, dc-coupled contact probes. This technology is, however, expe...

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Bibliographic Details
Main Authors: Larsen, M. J. H., Brown, E. R.
Format: Conference Proceeding
Language:English
Online Access:Request full text
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Summary:One of the bigger obstacles in the development of THz devices and integrated circuits is their electrical characterization in the upper-millimeter to terahertz range above 100 GHz. Today's technology is mainly based on metal-to-metal, dc-coupled contact probes. This technology is, however, expensive and fragile, and is difficult to scale to higher frequencies. This paper concerns contact-free probes that are (ac) coupled to the device or circuit-under-test by the polarization current rather than the conduction current. Numerical simulations are carried out to 1.0 THz and the probe coupling is found to be around -26 dB, with a bandwidth of at least 500 GHz.
ISSN:0547-3578
2379-2027
DOI:10.1109/NAECON.2012.6531021