Reduced radiative currents from GaAs/InGaAs and AlGaAs/GaAs p-i-n quantum well devices

Calibrated electroluminescence spectra of GaAs/InGaAs and AlGaAs/GaAs single and double quantum well (QW) p-i-n devices, at various temperatures (200-300 K) and biases (0.8-1.5 V), have been compared to theory to extract the quasi-Fermi level separation, /spl Delta//spl phi//sub f/, in the QWs and w...

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Main Authors: Nelson, J., Ballard, I., Barnes, J., Ekins-Daukes, N., Barnham, K.W.J., Kluftinger, B.G., Tsui, E.S.M., Foxon, C.T., Cheng, T.S., Roberts, J.S.
Format: Conference Proceeding
Language:English
Subjects:
ALUMINIUM ARSENIDE SOLAR CELLS
Educational institutions
ELECTROLUMINESCENCE
Electroluminescent devices
EMISSION SPECTRA
Gallium arsenide
GALLIUM ARSENIDE SOLAR CELLS
INDIUM ARSENIDES
Indium gallium arsenide
Laboratories
Photovoltaic cells
PIN photodiodes
Radiative recombination
SOLAR ENERGY
Solid state circuits
Temperature measurement
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Summary:Calibrated electroluminescence spectra of GaAs/InGaAs and AlGaAs/GaAs single and double quantum well (QW) p-i-n devices, at various temperatures (200-300 K) and biases (0.8-1.5 V), have been compared to theory to extract the quasi-Fermi level separation, /spl Delta//spl phi//sub f/, in the QWs and where possible in the host material. Emission from the host material for the GaAs/InGaAs cell is well fitted with /spl Delta//spl phi//sub f/=V/sub app/ at all biases and temperatures. In contrast, emission from the QW in both GaAs/InGaAs and AlGaAs/GaAs cases requires a value of /spl Delta//spl phi//sub f/ which is a few tens of meV less than V/sub app/. We attribute the variations in /spl Delta//spl phi//sub f/ to irreversible thermally assisted escape from the QWs and detail some preliminary results from double QW samples.
ISSN:0160-8371
DOI:10.1109/PVSC.1997.654237