Proton irradiated MBE grown GaInP/GaAs single junction and tandem solar cells

Degradation characteristics for MBE grown Ga/sub 0.51/In/sub 0.49/P and GaAs single junction and Ga/sub 0.51/In/sub 0.49/P/GaAs tandem solar cells irradiated with 3 MeV and 10 MeV protons with fluences of 10/sup 10/- 10/sup 13/ cm/sup -2/ are reported. The cell degradation was characterized with ill...

Full description

Saved in:
Bibliographic Details
Main Authors: Kazantsev, A.B., Lammasniemi, J., Jaakkola, R., Pessa, M., Rajatora, M., Jain, R.K.
Format: Conference Proceeding
Language:English
Subjects:
Degradation
Filters
Gallium arsenide
Inductors
Laboratories
MOCVD
Molecular beam epitaxial growth
Photovoltaic cells
Physics
Proton accelerators
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Degradation characteristics for MBE grown Ga/sub 0.51/In/sub 0.49/P and GaAs single junction and Ga/sub 0.51/In/sub 0.49/P/GaAs tandem solar cells irradiated with 3 MeV and 10 MeV protons with fluences of 10/sup 10/- 10/sup 13/ cm/sup -2/ are reported. The cell degradation was characterized with illuminated current-voltage (I-V) and spectral response measurements. Minority carrier diffusion length damage coefficients for the GaAs cells for 3 MeV and 10 MeV protons were calculated as a function of fluence. The results were compared to the InP damage coefficients. In addition, photo-annealing recovery effect at temperatures of 35-60/spl deg/C under 1-Sun AM0 illumination on the Ga/sub 0.51/In/sub 0.49/P cells are presented.
ISSN:0160-8371
DOI:10.1109/PVSC.1997.654258