AlGaN/GaN Three-Terminal Junction Devices for Rectification and Transistor Applications on 3C-SiC/Si Pseudosubstrates

• Published in: IEEE transactions on electron devices 2013-10, Vol.60 (10), p.3047-3052
• Main Authors: Hiller, Lars, Pezoldt, Jorg
• Format: Article
• Language: English
• Subjects: AlGaN; Aluminum gallium nitride; ballistic transport; Gallium nitride; GaN; HEMTs; heteroepitaxy; Junctions; Logic gates; MODFETs; SiC; side gate transistor; three-terminal junction; Transmission line measurements; TTJ
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2013.2265741

AlGaN/GaN heterosystems with their two dimensional electron gas at the interface enable high-mobility transistor devices. We present a technology for high-mobility three-terminal junction (TTJ) devices on 3C-SiC(111)/Si(111) pseudosubstrates. Those devices that allow multipurpose applications are determined by only slight variations in their geometrical properties such as side gate transistor behavior besides positive and negative type rectifications on a single chip based on AlGaN/GaN heterostructures grown on silicon substrates using a SiC transition layer. In this paper, we present the technological process and the nonlinear electrical properties of TTJ devices using Si basic substrates with room temperature electron mobility up to 1680 cm 2 /V s. Narrow and wide bar types of rectifying devices with T and Y type active regions are shown as well as side gate transistors with a transconductance of 20 mS/mm and an output conductance of 600 mS/mm. The TTJ active region withstands fields .