AlInN-Based HEMTs for Large-Signal Operation at 40 GHz

We report the large-signal performance of high electron mobility transistors (HEMTs) fabricated on GaN- and AlN-capped AlInN/GaN epilayers grown on semi-insulating SiC substrates. Large-signal measurements at 10 and 40 GHz are presented with both gate and drain dynamic loadlines to clarify the facto...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-10, Vol.60 (10), p.3091-3098
Main Authors: Tirelli, Stefano, Lugani, Lorenzo, Marti, Diego, Carlin, Jean-Francois, Grandjean, Nicolas, Bolognesi, C. R.
Format: Article
Language:English
Subjects:
AlInN
Current measurement
Gallium nitride
GaN
HEMTs
high-electron-mobility transistor (HEMT)
III-V semiconductor materials
Logic gates
metal-organic chemical vapor deposition
MODFETs
Performance evaluation
power measurements
power semiconductor devices
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Summary:We report the large-signal performance of high electron mobility transistors (HEMTs) fabricated on GaN- and AlN-capped AlInN/GaN epilayers grown on semi-insulating SiC substrates. Large-signal measurements at 10 and 40 GHz are presented with both gate and drain dynamic loadlines to clarify the factors limiting the high-power performance. Devices fabricated with AlN-capped epilayers show a marginal advantage in terms of higher current and reduced dispersion, but GaN-capped epilayers perform better in terms of reduced short-channel effects and better channel control. In large-signal operation at 40 GHz, both device types delivered power densities in excess of 4.5 W/mm. A maximum power density of 5.8 W/mm is achieved on GaN-capped devices which is, to the best of our knowledge, the highest power density reported at 40 GHz in AlInN/GaN-based HEMTs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2262136