Sub-10nm junction in InGaAs with sulfur mono-layer doping

A conformal, chemical-based sulfur monolayer doping process (thereafter S-MLD) on In x Ga 1-x As (x = 0.53) material is reported. Ultra-shallow junction (x j 10 19 /cm 3 .

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Bibliographic Details
Main Authors: Loh, W.-Y, Wang, W.-E, Hill, R. J. W., Barnett, J., Yum, J. H., Lysagth, P., Price, J., Hung, P. Y., Kirsch, P. D., Jammy, R.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Doping
Hafnium
Indium gallium arsenide
Junctions
Resistance
Silicon
Online Access:Request full text
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Description
Summary:A conformal, chemical-based sulfur monolayer doping process (thereafter S-MLD) on In x Ga 1-x As (x = 0.53) material is reported. Ultra-shallow junction (x j 10 19 /cm 3 .
DOI:10.1109/VLSI-TSA.2013.6545610