Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

This paper compares the conducted electromagnetic interference (EMI) in Si insulated gate bipolar transistor (IGBT) and silicon carbide (SiC) junction field-effect transistor (JFET) based motor drives. Two inverters, with the SiC and Si transistors, respectively, are built using the same circuit lay...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on power electronics 2014-04, Vol.29 (4), p.1757-1767
Main Authors: Gong, Xun, Ferreira, Jan Abraham
Format: Article
Language:English
Subjects:
Applied sciences
Circuits
Comparative analysis
Electric noise
Electrical engineering. Electrical power engineering
Electrical machines
Electromagnetic compatibility
Electromagnetic compatibility (EMC)
Electromagnetic interference
electromagnetic interference (EMI)
Electronics
Exact sciences and technology
filter
Information, signal and communications theory
insulated gate bipolar transistor (IGBT)
Insulated gate bipolar transistors
Inverters
JFETs
Logic gates
motor drive
Other multijunction devices. Power transistors. Thyristors
Regulation and control
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
silicon carbide (SiC) junction field-effect transistor (JFET)
Switches
Telecommunications and information theory
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper compares the conducted electromagnetic interference (EMI) in Si insulated gate bipolar transistor (IGBT) and silicon carbide (SiC) junction field-effect transistor (JFET) based motor drives. Two inverters, with the SiC and Si transistors, respectively, are built using the same circuit layout and investigated accordingly. Their conducted EMI levels are compared under the conditions of without filter and with traditional common mode (CM) filters. Reasons of the exhibited different noise emissions are analyzed. To verify the discussions, two inverters are tested in the CM. This allows for the identification and analysis of their maximized CM and differential mode (DM) wave shapes. It is shown that the excited parasitic oscillations during the switching transients are magnified more in the SiC JFET inverter, which is the main cause of the noise difference. Lastly, improved filtering solutions are proposed, which effectively suppressed the increased high-frequency noise due to the faster SiC switching speed.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2013.2271301