A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

The set voltage distribution of Pt/HfO 2 /Pt resistive switching memory is shown to fit well a Weibull model with Weibull slope and scale factor increasing logarithmically with the resistance measured at the set point. Gaining inspiration from the percolation model of oxide breakdown, a physics-base...

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Bibliographic Details
Published in:IEEE electron device letters 2013-08, Vol.34 (8), p.999-1001
Main Authors: Long, Shibing, Lian, Xiaojuan, Cagli, Carlo, Perniola, Luca, Miranda, Enrique, Liu, Ming, Sune, Jordi
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Hafnium compounds
Integrated circuits
Integrated circuits by function (including memories and processors)
Random access memory
Resistance
Resistive random access memory (RRAM)
resistive switching
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
set voltage statistics
Shape
Switches
Tunneling
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Summary:The set voltage distribution of Pt/HfO 2 /Pt resistive switching memory is shown to fit well a Weibull model with Weibull slope and scale factor increasing logarithmically with the resistance measured at the set point. Gaining inspiration from the percolation model of oxide breakdown, a physics-based model for the V set statistics is proposed. The results of the model are completely consistent with the experimental results and demonstrate the need of a strong reset to get large Weibull slope that provides some relief to the strong requirements imposed by the set speed-read disturb dilemma.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2266332