Suppression of Interface-Induced Noise by the Control of Electron-Phonon Interactions

We study the influence of various types of contacting media and contact area on the current-fluctuation level in semiconductors, testing the supposition that the electronic noise is governed, in part, by phonon-leaking dynamics to the environment. Using passivated and gettered silicon PIN diodes as...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2013-08, Vol.60 (4), p.2831-2839
Main Authors: Hammig, Mark D., Taehoon Kang, Manhee Jeong, Jarrett, Michael
Format: Article
Language:English
Subjects:
1f noise
Detectors
Gold
Noise
noise measurements
Phonons
semiconductor-metal interface
Silicon
solid-state detectors
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Summary:We study the influence of various types of contacting media and contact area on the current-fluctuation level in semiconductors, testing the supposition that the electronic noise is governed, in part, by phonon-leaking dynamics to the environment. Using passivated and gettered silicon PIN diodes as experimental test-beds, the presented data lends credence to the prediction that the phonon-refraction characteristics of the semiconductor-metal interface substantially impacts the current fluctuations in the solid. Specifically, if one implements metallic contacts with lower phonon-reflecting characteristics, such as those composed of silver or palladium, or if one increases the area through which phonons can leak to the surrounding environment, then the leakage current decreases.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2013.2266798