Non-destructive, high resolution channel temperature measurements of compound semiconductor devices

A technique based on infrared-emission spectroscopy has been found to be useful for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field-effect transistor (MESFET). Temperature measurements are important for the development of high-power Ga...

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Bibliographic Details
Main Authors: Quiesup Kim, Kayali, S.A.
Format: Conference Proceeding
Language:English
Subjects:
FETs
Gallium arsenide
Laser beams
MESFETs
Semiconductor device measurement
Semiconductor devices
Spatial resolution
Spectroscopy
Temperature dependence
Temperature measurement
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Summary:A technique based on infrared-emission spectroscopy has been found to be useful for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field-effect transistor (MESFET). Temperature measurements are important for the development of high-power GaAs MESFET and other advanced semiconductor devices because hot spots can affect operation and reduce operational lifetimes. Passive infrared-sensing techniques provide temperature measurements with a spatial resolution of 15 /spl mu/m, which is much too coarse for determining local distributions of temperature in state-of-the-art devices with submicron-sized gate structures. The present technique affords a spatial resolution of about 0.5 /spl mu/m.
DOI:10.1109/GAASRW.1997.656144