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InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate
We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz an...
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| creator | Klaime, K. Calo, C. Piron, R. Paranthoen, C. Thiam, D. Batte, T. Dehaese, O. Le Pouliquen, J. Loualiche, S. Le Corre, A. Merghem, K. Martinez, A. Ramdane, A. |
| description | We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation. |
| doi_str_mv | 10.1109/ICIPRM.2013.6562595 |
| format | conference_proceeding |
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Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. 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Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.</description><subject>Indium phosphide</subject><subject>Laser mode locking</subject><subject>Mode-locking</subject><subject>Molecular beam epitaxial growth</subject><subject>Optical pulses</subject><subject>Quantum dot lasers</subject><subject>quantum dots (QDs)</subject><subject>Radio frequency</subject><subject>semiconductors laser</subject><subject>Substrates</subject><issn>1092-8669</issn><isbn>9781467361309</isbn><isbn>1467361305</isbn><isbn>9781467361316</isbn><isbn>1467361313</isbn><isbn>1467361321</isbn><isbn>9781467361323</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpVkDtPwzAYRY0AiarkF3TxCEPSz3bs2GOJWohURIW6V35CIQ-IEyH-PUF0Ybq6VzpnuAgtCGSEgFpWZbV7fswoEJYJLihX_AwlqpAkFwUThBFx_q-DukCziaSpFEJdoSTGNwCYZIIWMEPrql3FZdXu8Oeo22FssOsG3HTOp3Vn373DtY6-j_il775a3LX4hhB2e4d_kTiaOPR68NfoMug6-uSUc7TfrPflQ7p9uq_K1TZ9paCGlJtcSKlNcJZQ5YK0lBvjhM0VWB0CCcZYyopphhA8t7mUhmrjpBTS5myOFn_ao_f-8NEfG91_H04_sB_h2U6R</recordid><startdate>201305</startdate><enddate>201305</enddate><creator>Klaime, K.</creator><creator>Calo, C.</creator><creator>Piron, R.</creator><creator>Paranthoen, C.</creator><creator>Thiam, D.</creator><creator>Batte, T.</creator><creator>Dehaese, O.</creator><creator>Le Pouliquen, J.</creator><creator>Loualiche, S.</creator><creator>Le Corre, A.</creator><creator>Merghem, K.</creator><creator>Martinez, A.</creator><creator>Ramdane, A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201305</creationdate><title>InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate</title><author>Klaime, K. ; Calo, C. ; Piron, R. ; Paranthoen, C. ; Thiam, D. ; Batte, T. ; Dehaese, O. ; Le Pouliquen, J. ; Loualiche, S. ; Le Corre, A. ; Merghem, K. ; Martinez, A. ; Ramdane, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-h209t-5b4688abfdc129df8c25bbd6c490caff1fbbc237c250ffe5c488b2abd8868c43</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Indium phosphide</topic><topic>Laser mode locking</topic><topic>Mode-locking</topic><topic>Molecular beam epitaxial growth</topic><topic>Optical pulses</topic><topic>Quantum dot lasers</topic><topic>quantum dots (QDs)</topic><topic>Radio frequency</topic><topic>semiconductors laser</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Klaime, K.</creatorcontrib><creatorcontrib>Calo, C.</creatorcontrib><creatorcontrib>Piron, R.</creatorcontrib><creatorcontrib>Paranthoen, C.</creatorcontrib><creatorcontrib>Thiam, D.</creatorcontrib><creatorcontrib>Batte, T.</creatorcontrib><creatorcontrib>Dehaese, O.</creatorcontrib><creatorcontrib>Le Pouliquen, J.</creatorcontrib><creatorcontrib>Loualiche, S.</creatorcontrib><creatorcontrib>Le Corre, A.</creatorcontrib><creatorcontrib>Merghem, K.</creatorcontrib><creatorcontrib>Martinez, A.</creatorcontrib><creatorcontrib>Ramdane, A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Klaime, K.</au><au>Calo, C.</au><au>Piron, R.</au><au>Paranthoen, C.</au><au>Thiam, D.</au><au>Batte, T.</au><au>Dehaese, O.</au><au>Le Pouliquen, J.</au><au>Loualiche, S.</au><au>Le Corre, A.</au><au>Merghem, K.</au><au>Martinez, A.</au><au>Ramdane, A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate</atitle><btitle>2013 International Conference on Indium Phosphide and Related Materials (IPRM)</btitle><stitle>ICIPRM</stitle><date>2013-05</date><risdate>2013</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><issn>1092-8669</issn><isbn>9781467361309</isbn><isbn>1467361305</isbn><eisbn>9781467361316</eisbn><eisbn>1467361313</eisbn><eisbn>1467361321</eisbn><eisbn>9781467361323</eisbn><abstract>We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.</abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.2013.6562595</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1092-8669 |
| ispartof | 2013 International Conference on Indium Phosphide and Related Materials (IPRM), 2013, p.1-2 |
| issn | 1092-8669 |
| language | eng |
| recordid | cdi_ieee_primary_6562595 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Indium phosphide Laser mode locking Mode-locking Molecular beam epitaxial growth Optical pulses Quantum dot lasers quantum dots (QDs) Radio frequency semiconductors laser Substrates |
| title | InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate |
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