Loading…
Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency
Plasma-induced defect generation process in crystalline Si structure was simulated by classical molecular dynamics simulations. Energy distribution functions of Ar and Cl ions incident on the Si surface (IEDF) were implemented to predict the impacts on the defect generation processes in present-day...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Conference Proceeding |
| Language: | English |
| Subjects: | |
| Online Access: | Request full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | |
|---|---|
| cites | |
| container_end_page | 194 |
| container_issue | |
| container_start_page | 191 |
| container_title | |
| container_volume | |
| creator | Matsuda, Asahiko Nakakubo, Yoshinori Takao, Yoshinori Eriguchi, Koji Ono, Kouichi |
| description | Plasma-induced defect generation process in crystalline Si structure was simulated by classical molecular dynamics simulations. Energy distribution functions of Ar and Cl ions incident on the Si surface (IEDF) were implemented to predict the impacts on the defect generation processes in present-day plasma process equipments. The damaged-layer thickness was confirmed to be a weak function of IEDF, which are consistent with a binary-collision-based range model and experimental results. In the case of "fin-gate structure", the simulation results predict that the sidewall may be damaged not by the incident angular distribution of ions but by the straggling of high-energy ions near the reaction surface, which leads to an on-current degradation of FinFETs. |
| doi_str_mv | 10.1109/ICICDT.2013.6563334 |
| format | conference_proceeding |
| fullrecord | <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_6563334</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6563334</ieee_id><sourcerecordid>6563334</sourcerecordid><originalsourceid>FETCH-LOGICAL-i241t-3891b3cfddfc0fb585d005206830cb88ce5ff5e7040bf5d181e0e084903fb7c33</originalsourceid><addsrcrecordid>eNpF0M1OwzAQBGDzJ1FKn6AXv4DLbmwnzrEKBSpV4kA5V46zRkZNE2JHqG8PgiJOc_g0cxjG5ggLRCjv1tW6ut8uMkC5yHUupVRn7AZVXkhVKDTnbJLlJQpQeXbBZmVh_gyyy2-TBoXUWl-zWYzvAJABIGqcsG6ZujbEFByPoR33NoXuEHnneb-3sbW8HzpHMYpwaEZHDX8JPI51TINNxBvb2jfigq-8J5d-ev9aBxtF333SwP1AHyMd3PGWXXm7jzQ75ZS9Pqy21ZPYPD-uq-VGhExhEtKUWEvnm8Y78LU2ugHQGeRGgquNcaS911SAgtrrBg0SEBhVgvR14aScsvnvbiCiXT-E1g7H3ek7-QV6FGCH</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency</title><source>IEEE Xplore All Conference Series</source><creator>Matsuda, Asahiko ; Nakakubo, Yoshinori ; Takao, Yoshinori ; Eriguchi, Koji ; Ono, Kouichi</creator><creatorcontrib>Matsuda, Asahiko ; Nakakubo, Yoshinori ; Takao, Yoshinori ; Eriguchi, Koji ; Ono, Kouichi</creatorcontrib><description>Plasma-induced defect generation process in crystalline Si structure was simulated by classical molecular dynamics simulations. Energy distribution functions of Ar and Cl ions incident on the Si surface (IEDF) were implemented to predict the impacts on the defect generation processes in present-day plasma process equipments. The damaged-layer thickness was confirmed to be a weak function of IEDF, which are consistent with a binary-collision-based range model and experimental results. In the case of "fin-gate structure", the simulation results predict that the sidewall may be damaged not by the incident angular distribution of ions but by the straggling of high-energy ions near the reaction surface, which leads to an on-current degradation of FinFETs.</description><identifier>ISSN: 2381-3555</identifier><identifier>ISBN: 9781467347402</identifier><identifier>ISBN: 146734740X</identifier><identifier>EISSN: 2691-0462</identifier><identifier>EISBN: 1467347418</identifier><identifier>EISBN: 1467347434</identifier><identifier>EISBN: 9781467347419</identifier><identifier>EISBN: 9781467347433</identifier><identifier>DOI: 10.1109/ICICDT.2013.6563334</identifier><language>eng</language><publisher>IEEE</publisher><subject>bias frequency ; Distribution functions ; fin-gate ; ion energy distribution function ; Ions ; molecular dynamics ; MOSFET ; plasma-induced damage ; Plasmas ; Predictive models ; Silicon ; Surface treatment</subject><ispartof>Proceedings of 2013 International Conference on IC Design & Technology (ICICDT), 2013, p.191-194</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6563334$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6563334$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Matsuda, Asahiko</creatorcontrib><creatorcontrib>Nakakubo, Yoshinori</creatorcontrib><creatorcontrib>Takao, Yoshinori</creatorcontrib><creatorcontrib>Eriguchi, Koji</creatorcontrib><creatorcontrib>Ono, Kouichi</creatorcontrib><title>Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency</title><title>Proceedings of 2013 International Conference on IC Design & Technology (ICICDT)</title><addtitle>ICICDT</addtitle><description>Plasma-induced defect generation process in crystalline Si structure was simulated by classical molecular dynamics simulations. Energy distribution functions of Ar and Cl ions incident on the Si surface (IEDF) were implemented to predict the impacts on the defect generation processes in present-day plasma process equipments. The damaged-layer thickness was confirmed to be a weak function of IEDF, which are consistent with a binary-collision-based range model and experimental results. In the case of "fin-gate structure", the simulation results predict that the sidewall may be damaged not by the incident angular distribution of ions but by the straggling of high-energy ions near the reaction surface, which leads to an on-current degradation of FinFETs.</description><subject>bias frequency</subject><subject>Distribution functions</subject><subject>fin-gate</subject><subject>ion energy distribution function</subject><subject>Ions</subject><subject>molecular dynamics</subject><subject>MOSFET</subject><subject>plasma-induced damage</subject><subject>Plasmas</subject><subject>Predictive models</subject><subject>Silicon</subject><subject>Surface treatment</subject><issn>2381-3555</issn><issn>2691-0462</issn><isbn>9781467347402</isbn><isbn>146734740X</isbn><isbn>1467347418</isbn><isbn>1467347434</isbn><isbn>9781467347419</isbn><isbn>9781467347433</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpF0M1OwzAQBGDzJ1FKn6AXv4DLbmwnzrEKBSpV4kA5V46zRkZNE2JHqG8PgiJOc_g0cxjG5ggLRCjv1tW6ut8uMkC5yHUupVRn7AZVXkhVKDTnbJLlJQpQeXbBZmVh_gyyy2-TBoXUWl-zWYzvAJABIGqcsG6ZujbEFByPoR33NoXuEHnneb-3sbW8HzpHMYpwaEZHDX8JPI51TINNxBvb2jfigq-8J5d-ev9aBxtF333SwP1AHyMd3PGWXXm7jzQ75ZS9Pqy21ZPYPD-uq-VGhExhEtKUWEvnm8Y78LU2ugHQGeRGgquNcaS911SAgtrrBg0SEBhVgvR14aScsvnvbiCiXT-E1g7H3ek7-QV6FGCH</recordid><startdate>201305</startdate><enddate>201305</enddate><creator>Matsuda, Asahiko</creator><creator>Nakakubo, Yoshinori</creator><creator>Takao, Yoshinori</creator><creator>Eriguchi, Koji</creator><creator>Ono, Kouichi</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201305</creationdate><title>Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency</title><author>Matsuda, Asahiko ; Nakakubo, Yoshinori ; Takao, Yoshinori ; Eriguchi, Koji ; Ono, Kouichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i241t-3891b3cfddfc0fb585d005206830cb88ce5ff5e7040bf5d181e0e084903fb7c33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>bias frequency</topic><topic>Distribution functions</topic><topic>fin-gate</topic><topic>ion energy distribution function</topic><topic>Ions</topic><topic>molecular dynamics</topic><topic>MOSFET</topic><topic>plasma-induced damage</topic><topic>Plasmas</topic><topic>Predictive models</topic><topic>Silicon</topic><topic>Surface treatment</topic><toplevel>online_resources</toplevel><creatorcontrib>Matsuda, Asahiko</creatorcontrib><creatorcontrib>Nakakubo, Yoshinori</creatorcontrib><creatorcontrib>Takao, Yoshinori</creatorcontrib><creatorcontrib>Eriguchi, Koji</creatorcontrib><creatorcontrib>Ono, Kouichi</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Matsuda, Asahiko</au><au>Nakakubo, Yoshinori</au><au>Takao, Yoshinori</au><au>Eriguchi, Koji</au><au>Ono, Kouichi</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency</atitle><btitle>Proceedings of 2013 International Conference on IC Design & Technology (ICICDT)</btitle><stitle>ICICDT</stitle><date>2013-05</date><risdate>2013</risdate><spage>191</spage><epage>194</epage><pages>191-194</pages><issn>2381-3555</issn><eissn>2691-0462</eissn><isbn>9781467347402</isbn><isbn>146734740X</isbn><eisbn>1467347418</eisbn><eisbn>1467347434</eisbn><eisbn>9781467347419</eisbn><eisbn>9781467347433</eisbn><abstract>Plasma-induced defect generation process in crystalline Si structure was simulated by classical molecular dynamics simulations. Energy distribution functions of Ar and Cl ions incident on the Si surface (IEDF) were implemented to predict the impacts on the defect generation processes in present-day plasma process equipments. The damaged-layer thickness was confirmed to be a weak function of IEDF, which are consistent with a binary-collision-based range model and experimental results. In the case of "fin-gate structure", the simulation results predict that the sidewall may be damaged not by the incident angular distribution of ions but by the straggling of high-energy ions near the reaction surface, which leads to an on-current degradation of FinFETs.</abstract><pub>IEEE</pub><doi>10.1109/ICICDT.2013.6563334</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2381-3555 |
| ispartof | Proceedings of 2013 International Conference on IC Design & Technology (ICICDT), 2013, p.191-194 |
| issn | 2381-3555 2691-0462 |
| language | eng |
| recordid | cdi_ieee_primary_6563334 |
| source | IEEE Xplore All Conference Series |
| subjects | bias frequency Distribution functions fin-gate ion energy distribution function Ions molecular dynamics MOSFET plasma-induced damage Plasmas Predictive models Silicon Surface treatment |
| title | Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T02%3A55%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Atomistic%20simulations%20of%20plasma%20process-induced%20Si%20substrate%20damage%20-%20Effects%20of%20substrate%20bias-power%20frequency&rft.btitle=Proceedings%20of%202013%20International%20Conference%20on%20IC%20Design%20&%20Technology%20(ICICDT)&rft.au=Matsuda,%20Asahiko&rft.date=2013-05&rft.spage=191&rft.epage=194&rft.pages=191-194&rft.issn=2381-3555&rft.eissn=2691-0462&rft.isbn=9781467347402&rft.isbn_list=146734740X&rft_id=info:doi/10.1109/ICICDT.2013.6563334&rft.eisbn=1467347418&rft.eisbn_list=1467347434&rft.eisbn_list=9781467347419&rft.eisbn_list=9781467347433&rft_dat=%3Cieee_CHZPO%3E6563334%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i241t-3891b3cfddfc0fb585d005206830cb88ce5ff5e7040bf5d181e0e084903fb7c33%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6563334&rfr_iscdi=true |