A microstructure semiconductor thermocouple for microwave power sensors

By using standard silicon planar process, combined with an anisotropically etch technology, a microstructure Si-Ta/sub 2/N thermocouple for microwave power sensors has been fabricated. The sensor has a sensitivity as high as 200 /spl mu/V/mW over a frequency range of 10 MHz to 18 GHz at a power leve...

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Bibliographic Details
Main Authors: Chen Deyong, Cui Dafu, Han Jinghong, Chen Shaofeng, Wang Li, Li Zigao, Fu Binxiang
Format: Conference Proceeding
Language:English
Subjects:
Anisotropic magnetoresistance
Frequency
Microstructure
Microwave sensors
Power measurement
Silicon
Sputter etching
Temperature sensors
Thermal sensors
Thermistors
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Summary:By using standard silicon planar process, combined with an anisotropically etch technology, a microstructure Si-Ta/sub 2/N thermocouple for microwave power sensors has been fabricated. The sensor has a sensitivity as high as 200 /spl mu/V/mW over a frequency range of 10 MHz to 18 GHz at a power level from 1 /spl mu/W to 100 mW.
DOI:10.1109/APMC.1997.656348