A 3.4mW 65nm CMOS 5th order programmable active-RC channel select filter for LTE receivers

• Main Authors: Abdulaziz, Mohammed, Nejdel, Anders, Törmänen, Markus, Sjöland, Henrik
• Format: Conference Proceeding
• Language: English
• Subjects: Active filters; Bandwidth; Capacitors; CMOS integrated circuits; CMOS technology; Electrical Engineering, Electronic Engineering, Information Engineering; Elektroteknik och elektronik; Engineering and Technology; low pass filters; low pass filters low power electronic; low power electronics; Mathematical model; Noise; Operational Amplifiers; Receivers; Teknik; Tuning
• ISSN: 1529-2517; 2375-0995
• DOI: 10.1109/RFIC.2013.6569565

In this work a low power 5th order chebyshev active-RC low pass filter that meets Rel-8 LTE receiver requirements has been designed with programmable bandwidth and overshoot. Designed for a homodyne LTE receiver, filter bandwidths from 700kHz to 10MHz are supported. The bandwidth of the operational amplifiers is improved using a novel phase enhancement technique. The filter was implemented in 65nm CMOS technology with a core area of 0.29mm 2 . Its total current consumption is 2.83mA from a 1.2V supply. The measured input referred noise is 39nV/√Hz, the in-band IIP3 is 21.5dBm, at the band-edge the IIP3 is 20.7dBm, the out-of-band IIP3 is 20.6dBm, and the compression point is 0dBm.