A Dynamic-Adjusting Threshold-Voltage Scheme for FinFETs low power designs

In this paper, a novel device/circuit co-design scheme, namely Dynamic-Adjusting Threshold-Voltage Scheme (DATS) for independent-gate mode FinFET circuits has been proposed. The main idea of this scheme is that a pair of back-gate bias of FinFETs is adjusted dynamically to change threshold voltage a...

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Bibliographic Details
Main Authors: XiaoXin Cui, KaiSheng Ma, Kai Liao, Nan Liao, Di Wu, Wei Wei, Rui Li, DunShan Yu
Format: Conference Proceeding
Language:English
Subjects:
Clocks
FinFETs
Integrated circuit modeling
Logic gates
Phase locked loops
Power dissipation
Threshold voltage
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Summary:In this paper, a novel device/circuit co-design scheme, namely Dynamic-Adjusting Threshold-Voltage Scheme (DATS) for independent-gate mode FinFET circuits has been proposed. The main idea of this scheme is that a pair of back-gate bias of FinFETs is adjusted dynamically to change threshold voltage according to the system operating frequency and operating mode, which could optimize circuit power, especially leakage power. The experimental and simulation result shows that the leakage power dissipation reduced greatly when circuits operate at the lower frequency, and the energy-delay product of FinFET circuits is reduced by 30% approximately.
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2013.6571799