Experimental analysis of HEMT behavior under low-temperature conditions

An experimental analysis of high-electron-mobility transistor (HEMT) behavior under low-temperature conditions is presented. Specific measurements have been performed to investigate the deep-level trapping effects on basic device characteristics such as carrier concentration, electron mobility in th...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1991-01, Vol.38 (1), p.3-13
Main Authors: Belache, A., Vanoverschelde, A., Salmer, G., Wolny, M.
Format: Article
Language:English
Subjects:
Applied sciences
Current measurement
Electrical resistance measurement
Electron mobility
Electron traps
Electronics
Exact sciences and technology
Frequency measurement
HEMTs
Microwave devices
Microwave measurements
MODFETs
Performance evaluation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:An experimental analysis of high-electron-mobility transistor (HEMT) behavior under low-temperature conditions is presented. Specific measurements have been performed to investigate the deep-level trapping effects on basic device characteristics such as carrier concentration, electron mobility in the structure, and access resistances. The influence of the collapse phenomenon on the microwave device parameters completes the knowledge of these parasitic effects. Explanation of mechanisms responsible for the anomalous phenomena and means to suppress them are reported. Microwave parameters measurements demonstrate that HEMTs showing no parasitic collapse effects exhibit improved performance at 77 K. Large improvements of current gain cutoff frequency and noise figure are presented.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.65729