Fabrication of GeSn-On-Insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics

In this work, we demonstrate the low temperature fabrication of high quality GeSn-On-Insulator (GSOI) which forms the crucial module for monolithic 3DIC. The use of GeSn and Ge overcomes many challenges of monolithic 3D integration, including the need for Si-compatible high-mobility and direct gap m...

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Bibliographic Details
Main Authors: Lin, J.-Y Jason, Gupta, Suyog, Yi-Chiau Huang, Yihwan Kim, Miao Jin, Sanchez, Errol, Chen, Robert, Balram, Krishna, Miller, David, Harris, James, Saraswat, Krishna
Format: Conference Proceeding
Language:English
Subjects:
Aluminum oxide
CMOS integrated circuits
Fabrication
Passivation
Photonics
Silicon
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Summary:In this work, we demonstrate the low temperature fabrication of high quality GeSn-On-Insulator (GSOI) which forms the crucial module for monolithic 3DIC. The use of GeSn and Ge overcomes many challenges of monolithic 3D integration, including the need for Si-compatible high-mobility and direct gap materials. Furthermore, we introduce excellent passivation of the semiconductor/buried oxide (BOX) interface which is crucial to the high performance of devices on the stacked layers.
ISSN:0743-1562