Thin Film Paper Transistors

In this work, we report on the fabrication of hybrid n-channel thin film transistors using paper as substrate and gate insulator, and indium oxide (In 2 O 3 ) thin films as channel layer, and contacts for the source, drain and gate respectively. Capacitor paper having 10 μm thickness was used. In 2...

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Bibliographic Details
Published in:Journal of display technology 2013-09, Vol.9 (9), p.760-763
Main Authors: Gherendi, Florin, Nistor, Magdalena, Mandache, Nicolae B.
Format: Article
Language:English
Subjects:
Electron beams
Hybrid oxide field-effect transistor
Logic gates
paper insulator
Plasmas
pulsed electron beam deposition
Substrates
Thin film transistors
thin films
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Summary:In this work, we report on the fabrication of hybrid n-channel thin film transistors using paper as substrate and gate insulator, and indium oxide (In 2 O 3 ) thin films as channel layer, and contacts for the source, drain and gate respectively. Capacitor paper having 10 μm thickness was used. In 2 O 3 thin films were grown by pulsed electron beam deposition method at room temperature. The gate leakage current was 20 nA at 5 V and the on/off current ratio up to 6×10 4 , limited mainly by the gate leakage. The transfer characteristics -I d (V gs )- showed a memory effect with a threshold voltage of 0.8 V in "0" state and -3.6 V in "1" state. The drain current-voltage characteristics family -I d (V ds )- showed saturation currents up to 3.5 mA in "1"state and about 500 μA in "0" state. The subthreshold swing was 0.3-0.5 V/decade.
ISSN:1551-319X
1558-9323
DOI:10.1109/JDT.2013.2278036