A comparative study between 4H-SiC and silicon power PiN diode having the same breakdown voltage 4KV

The exploitation of silicon carbide semiconductor devices in power electronic field have made exceptional improvements by their fast switching and low dissipated losses especially at high operating temperatures, However, physical performances of silicon power components have reached their limits. Th...

Full description

Saved in:
Bibliographic Details
Main Authors: Jedidi, Atef, Garrab, Hatem, Besbes, Kamel
Format: Conference Proceeding
Language:English
Subjects:
4H-SiC
Diode PiN
Doping
Mathematical model
Numerical models
Numerical Simulation
PIN photodiodes
Semiconductor diodes
Silicon
Silicon carbide
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The exploitation of silicon carbide semiconductor devices in power electronic field have made exceptional improvements by their fast switching and low dissipated losses especially at high operating temperatures, However, physical performances of silicon power components have reached their limits. This paper presents a comparative study, through numerical simulation and using the finite element method modeling, between 4H-SiC and silicon power PiN diode having the same breakdown voltage "4KV". This comparative study highlights the benefits of silicon carbide.
DOI:10.1109/ICEESA.2013.6578428