Application of low-noise TIA ICs for novel sensing of MOSFET noise up to the GHz region

We have realized the characterization of MOSFET noise up to 3 GHz by locating a low-noise (LN) transimpedance amplifier (TIA) close to the devices to be tested (DUTs). A noise floor as low as 3 pA/vHz was achieved by using an external high-voltage input. Moreover, a high-frequency noise probe equipp...

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Bibliographic Details
Main Authors: Ohmori, Kenji, Hasunuma, Ryu, Yamamoto, Satoshi, Tamura, Yoshinori, Hao Jiang, Ishihara, Noboru, Masu, Kazuya, Yamada, Keisaku
Format: Conference Proceeding
Language:English
Subjects:
Floors
Frequency measurement
Integrated circuits
MOSFET
Noise
Noise measurement
noise probe
Probes
TIA
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Summary:We have realized the characterization of MOSFET noise up to 3 GHz by locating a low-noise (LN) transimpedance amplifier (TIA) close to the devices to be tested (DUTs). A noise floor as low as 3 pA/vHz was achieved by using an external high-voltage input. Moreover, a high-frequency noise probe equipped with a TIA IC was fabricated, with which measurements in a frequency range up to 800 MHz were achieved for on-wafer MOSFETs with conventional test structures.
ISSN:2158-5601
2158-5636