Microplasmas avalanche breakdown as a diagnostic tool and reliability appreciating of the INGAN/GAN high-power LEDs

Microplasmas breakdown of the InGaN/GaN heterostructures of different types of high-power light-emitting diodes is studied. It is shown that microplasma parameters, connected with reliability and such fabricating technology of the InGaN/GaN heterostructures as substrate material - Al 2 O 3 , SiC or...

Full description

Saved in:
Bibliographic Details
Main Authors: Vcleschuk, V. P., Vlasenko, A. I., Kisselvuk, M. P., Lyashenko, O. V.
Format: Conference Proceeding
Language:English
Subjects:
Electroluminescence
Fluctuations
Gallium nitride
InGaN/GaN heterostructure
Light emitting diodes
microplasmas breakdown
Noise
Substrates
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Microplasmas breakdown of the InGaN/GaN heterostructures of different types of high-power light-emitting diodes is studied. It is shown that microplasma parameters, connected with reliability and such fabricating technology of the InGaN/GaN heterostructures as substrate material - Al 2 O 3 , SiC or Si, which determines the density of the critical extended defects, light flux, homogeneity of current spreading.
DOI:10.1109/ICNF.2013.6578938