Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications

With the trend toward more electrical aircraft, Silicon Carbide power switches could be heavily used for high temperatures applications within the aircraft. The assessment of the reliability of such power electronic components is a key element for the qualification process. In this study we focused...

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Main Authors: Santini, Thomas, Sebastien, Morand, Florent, Miller, Phung, Luong-Viet, Allard, Bruno
Format: Conference Proceeding
Language:English
Subjects:
Accelerated Aging Tests
Acceleration Factors
Aircraft
Gate Oxide
Human computer interaction
Logic gates
Monitoring
MOSFET
Reliability
Reliability Assessment
Silicon Carbide
Voltage measurement
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creator Santini, Thomas
Sebastien, Morand
Florent, Miller
Phung, Luong-Viet
Allard, Bruno
description With the trend toward more electrical aircraft, Silicon Carbide power switches could be heavily used for high temperatures applications within the aircraft. The assessment of the reliability of such power electronic components is a key element for the qualification process. In this study we focused on the reliability of the MOSFET gate oxide which is known to be the more fragile part of these components.
doi_str_mv 10.1109/ECCE-Asia.2013.6579125
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Accelerated Aging Tests
Acceleration Factors
Aircraft
Gate Oxide
Human computer interaction
Logic gates
Monitoring
MOSFET
Reliability
Reliability Assessment
Silicon Carbide
Voltage measurement
title Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications
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