Current status of silicon carbide power devices and their application in photovoltaic converters

In recent years, commercial-grade silicon carbide (SiC) power semiconductor devices have shown promise to deliver the next generation of SiC-based power electronic converters operating at higher temperature/frequencies when compared with performances achieved by Si-based counterparts. This paper com...

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Bibliographic Details
Main Authors: Taekyun Kim, Minsoo Jang, Agelidis, Vassilios G.
Format: Conference Proceeding
Language:English
Subjects:
Artificial intelligence
Ear
Indexes
Indium phosphide
inverter
MOSFET
silicon carbide (SiC)
solar photovoltaic (PV)
Switches
Wide bandgap semiconductor
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Summary:In recent years, commercial-grade silicon carbide (SiC) power semiconductor devices have shown promise to deliver the next generation of SiC-based power electronic converters operating at higher temperature/frequencies when compared with performances achieved by Si-based counterparts. This paper compares different types of SiC semiconductor devices, commercially available at present time. The performance of photovoltaic (PV) prototype converters, reported so far in the technical literature, utilizing SiC technologies and their potential and limitations are also analysed and reported. To fully exploit superior electrical and thermal properties of SiC devices in PV converters, technology directions with respect to converter characteristics and performance possibilities are discussed.
DOI:10.1109/ECCE-Asia.2013.6579152