High-Power Wideband L-Band Suboptimum Class-E Power Amplifier

This paper presents a high-power high-efficiency wideband suboptimum Class-E RF power amplifier based on a packaged high-power GaN HEMT. It uses a simple double-reactance compensation and impedance transformation load network that includes device intrinsic capacitance, package parasitics, low-loss m...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2013-10, Vol.61 (10), p.3712-3720
Main Authors: Ortega-Gonzalez, Francisco Javier, Tena-Ramos, David, Patino-Gomez, Moises, Pardo-Martin, Jose Manuel, Madueno-Pulido, Diego
Format: Article
Language:English
Subjects:
Admittance
Amplifiers
Applied sciences
Bandwidth
Broadband amplifiers
Capacitance
Circuit properties
class-E
Design. Technologies. Operation analysis. Testing
digital audio broadcasting (DAB)
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
envelope elimination and restoration (EER)
envelope tracking (ET)
Exact sciences and technology
high efficiency
Impedance
Integrated circuits
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
mobile satellite
power amplifiers
Power generation
RADAR
satellite communication
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal convertors
suboptimum class-E
Switches
Transistors
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Summary:This paper presents a high-power high-efficiency wideband suboptimum Class-E RF power amplifier based on a packaged high-power GaN HEMT. It uses a simple double-reactance compensation and impedance transformation load network that includes device intrinsic capacitance, package parasitics, low-loss microstrip transmission lines, and lumped components. This load network makes the GaN HEMT operate in suboptimum Class-E from 900 to 1500 MHz (50% fractional bandwidth at 1200 MHz). The amplifier can operate both in continuous wave and pulsed modes over its full bandwidth without tuning. It delivers up to 180-W output power with up to 85% drain efficiency and PAE=81%. To the best of the authors' knowledge, the amplifier proposed in this work outperforms commercial grade amplifiers that operate in the same frequency band with similar output power levels. Direct applications for this amplifier include mobile satellite communications transmitters, envelope elimination and restoration digital audio broadcasting transmitters, and power stages for primary and secondary RADAR transmitters.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2013.2279366