Analysis of satellite defects formed in photolithograph process by TOF-SIMS and XPS

Satellite defects are found on wafer surface after development of photo-resist in photolithograph process. We present advanced TOF-SIMS and XPS analysis together with the process investigation to reveal the formation mechanism of the defects.

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Bibliographic Details
Main Authors: Lei Zhu, Teo, H. W., Hua, Y. N., Loh, H. L., Leong, C. C., Kam, C. H., Zhao, S. P., Redkar, S., Gui, D., Sheng, Y. Q., Xing, Z. X.
Format: Conference Proceeding
Language:English
Subjects:
Failure analysis
Integrated circuits
Online Access:Request full text
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Description
Summary:Satellite defects are found on wafer surface after development of photo-resist in photolithograph process. We present advanced TOF-SIMS and XPS analysis together with the process investigation to reveal the formation mechanism of the defects.
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2013.6599170