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Low-Temperature Microwave Annealing for MOSFETs With High-k/Metal Gate Stacks
In this letter, low-temperature (480°C) microwave annealing (MWA) for MOS devices with high-k/metal gate-stacks is demonstrated. The capacitance-voltage (C-V) characteristics of the MOS gate-stacks, TiN/HfO 2 , and TaN/HfO 2 , after different annealing methods are discussed. The increases in equival...
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Published in: | IEEE electron device letters 2013-10, Vol.34 (10), p.1286-1288 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this letter, low-temperature (480°C) microwave annealing (MWA) for MOS devices with high-k/metal gate-stacks is demonstrated. The capacitance-voltage (C-V) characteristics of the MOS gate-stacks, TiN/HfO 2 , and TaN/HfO 2 , after different annealing methods are discussed. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated using low temperature MWA. In addition, the short channel effects in nMOSFETs annealed by MWA can be also improved because of the suppression of dopant diffusion and stabilization of EOT. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2013.2279396 |