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Low-Temperature Microwave Annealing for MOSFETs With High-k/Metal Gate Stacks

In this letter, low-temperature (480°C) microwave annealing (MWA) for MOS devices with high-k/metal gate-stacks is demonstrated. The capacitance-voltage (C-V) characteristics of the MOS gate-stacks, TiN/HfO 2 , and TaN/HfO 2 , after different annealing methods are discussed. The increases in equival...

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Bibliographic Details
Published in:IEEE electron device letters 2013-10, Vol.34 (10), p.1286-1288
Main Authors: Yao-Jen Lee, Bo-An Tsai, Chiung-Hui Lai, Zheng-Yao Chen, Fu-Kuo Hsueh, Po-Jung Sung, Current, Michael I., Chih-Wei Luo
Format: Article
Language:English
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Summary:In this letter, low-temperature (480°C) microwave annealing (MWA) for MOS devices with high-k/metal gate-stacks is demonstrated. The capacitance-voltage (C-V) characteristics of the MOS gate-stacks, TiN/HfO 2 , and TaN/HfO 2 , after different annealing methods are discussed. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated using low temperature MWA. In addition, the short channel effects in nMOSFETs annealed by MWA can be also improved because of the suppression of dopant diffusion and stabilization of EOT.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2279396