Fabrication of Crystalline Si Waveguides on (1 0 0) Bulk Si Substrate Using Laser Reformation Method

Optical solution has been proposed for short-reach interconnects. A primary concern is the integration of photonics and electronics. A method to fabricate crystalline Si waveguides on insulator from bulk Si substrate using a laser reformation technique is here presented. A high-power laser is used t...

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Bibliographic Details
Published in:Journal of lightwave technology 2013-11, Vol.31 (21), p.3368-3373
Main Authors: HUNG, Shih-Che, LIN, Shih-Jieh, CHAO, Jiun-Jie, LIN, Ching-Fuh
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Excimer lasers
Fabrication
Fundamental areas of phenomenology (including applications)
Gas lasers including excimer and metal-vapor lasers
Integrated optics. Optical fibers and wave guides
Lasers
Optical and optoelectronic circuits
Optical waveguides
Optics
Oxidation
Physics
Silicon
silicon on insulator technology
Substrates
waveguide components
Waveguide lasers
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Summary:Optical solution has been proposed for short-reach interconnects. A primary concern is the integration of photonics and electronics. A method to fabricate crystalline Si waveguides on insulator from bulk Si substrate using a laser reformation technique is here presented. A high-power laser is used to melt and reshape a Si fin structure. This is followed by an oxidation process to produce oxide as an optical isolation layer beneath the Si and form the waveguide structure. The Si waveguide, using laser reformation method in our experiment, has 140 nm width and 420 nm height, showing a single mode property and an effective refractive index of about 2.09. It represents a viable method for creating crystalline Si waveguides on CMOS-compatible Si substrate and reveals the potential of Si photonic devices integrated with Si electronics.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2013.2283216