A>400 GHz fmax transferred-substrate heterojunction bipolar transistor IC technology

We report transferred-substrate AlInAs/GaInAs bipolar transistors. A device having a 0.6 μm×25 μm emitter and a 0.8 μm×29 μm collector exhibited f/sub /spl tau//=134 GHz and f max >400 GHz. A device with a 0.6 μm×25 μm emitter and a 1.8 μm×29 μm collector exhibited 400 GHz f max 164 GHz f/sub /sp...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 1998-03, Vol.19 (3), p.77-79
Main Authors: Lee, Q., Agarwal, B., Mensa, D., Pullela, R., Guthrie, J., Samoska, L., Rodwell, M.J.W.
Format: Article
Language:English
Subjects:
Bipolar transistors
Dielectric constant
Dielectric substrates
Fabrication
Gold
Heat transfer
Microstrip
Ohmic contacts
Polymers
Wiring
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report transferred-substrate AlInAs/GaInAs bipolar transistors. A device having a 0.6 μm×25 μm emitter and a 0.8 μm×29 μm collector exhibited f/sub /spl tau//=134 GHz and f max >400 GHz. A device with a 0.6 μm×25 μm emitter and a 1.8 μm×29 μm collector exhibited 400 GHz f max 164 GHz f/sub /spl tau//. The improvement in f max over previous transferred-substrate HBT's is due to improved base Ohmic contacts, narrower emitter-base and collector-base junction areas, and slightly reduced transit times. The transferred-substrate fabrication process provides electroplated gold thermal vias for transistor heat-sinking and a microstrip wiring environment on a low dielectric constant polymer substrate.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.661170