Advanced substrate-independent VCSELs

We have transferred epitaxial layers between wafers and we have fabricated VCSELs on new host substrates. This procedure facilitates more advanced VCSEL designs by providing processing access to both sides of the epitaxial layers.

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Bibliographic Details
Main Authors: Riaziat, M., Kyi, W., Xu, Y., Wong, P. S., Wasserbauer, J., Shih, C.
Format: Conference Proceeding
Language:English
Subjects:
Dielectrics
Epitaxial growth
Fabrication
Silicon
Substrates
Vertical cavity surface emitting lasers
Online Access:Request full text
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Description
Summary:We have transferred epitaxial layers between wafers and we have fabricated VCSELs on new host substrates. This procedure facilitates more advanced VCSEL designs by providing processing access to both sides of the epitaxial layers.
ISSN:1099-4742
2376-8614
DOI:10.1109/PHOSST.2013.6614443