Properties of epitaxial AlN thin film deposited on sapphire substrate by ECR plasma

We prepared AlN film on c-plane sapphire substrate by electron cyclotron resonance plasma-enhanced sputtering deposition (ECR-sputtering). X-ray diffraction (XRD) verified the epitaxial growth of AlN films with the full width at half maximum (FWHM) of rocking curve of 0.04 deg. even on the film thic...

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Bibliographic Details
Main Authors: Kaneko, Satoru, Ito, Takeshi, Yasui, Manabu, Kurouchi, Masahito, Nagano, Takatoshi, Torii, Hironori, Amazawa, Takao, Lee Seughwan, Sungkyun Park, Tikumasu, Takashi, Takikawa, Hirofumi
Format: Conference Proceeding
Language:English
Subjects:
Aluminam Nitridet
Crystal Structure
ECR-sputtering
Epitaxial
Epitaxial growth
first priciple theory
III-V semiconductor materials
Lattices
Photonic band gap
Plasmas
Substrates
thin film
transmittancy
Wide Gap
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Summary:We prepared AlN film on c-plane sapphire substrate by electron cyclotron resonance plasma-enhanced sputtering deposition (ECR-sputtering). X-ray diffraction (XRD) verified the epitaxial growth of AlN films with the full width at half maximum (FWHM) of rocking curve of 0.04 deg. even on the film thickness of 100 nm. XRD also verified slight change of peak position from AlN film along both out of plane and in-plane directions.
DOI:10.1109/ICAIT.2013.6621498