RESURF p-n Diode With a Buried Layer, a Comprehensive Study

In this paper, important parameters of the p-buried layer of a high-voltage reduced surface field p-n diode are analyzed and discussed in terms of effects on device performance, including breakdown voltage and specific turn-on resistance, R on,sp . Guidelines for optimizing the vertical position, la...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-11, Vol.60 (11), p.3835-3841
Main Authors: YANG, Fu-Jen, JENG GONG, SU, Ru-Yi, TSAI, Chun-Lin, TUAN, Hsiao-Chin, HUANG, Chih-Fang
Format: Article
Language:English
Subjects:
Applied sciences
Avalanche breakdown
Breakdown voltage
buried layer
Compound structure devices
Diodes
Electric potential
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
High-voltage techniques
p-n diode and reduced surface field (RESURF)
power device
Power electronics, power supplies
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Voltage control
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Summary:In this paper, important parameters of the p-buried layer of a high-voltage reduced surface field p-n diode are analyzed and discussed in terms of effects on device performance, including breakdown voltage and specific turn-on resistance, R on,sp . Guidelines for optimizing the vertical position, lateral location, and doping concentration of the p-buried layer are suggested. The experimental results demonstrate that the p-n diode with the proposed p-buried layer optimization design can improve breakdown voltage by 30.7% but only increases 2.7% in specific on-resistance R on,sp .
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2283582