Characterization and modeling of SiC Junction Barrier Schottky diode for circuit simulation

A physics based compact model for SiC Junction Barrier Schottky (JBS) diodes is presented which features a comprehensive physical description of the DC and CV behavior of SiC JBS diodes. For the first time, modeling of leakage current for JBS diode in circuit simulation is done. The model includes t...

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Bibliographic Details
Main Authors: Ahmed, Shamim, Mantooth, H. Alan, Mudholkar, Mihir, Singh, Ranbir
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Integrated circuit modeling
Junctions
Schottky diodes
Silicon carbide
Temperature measurement
Online Access:Request full text
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Description
Summary:A physics based compact model for SiC Junction Barrier Schottky (JBS) diodes is presented which features a comprehensive physical description of the DC and CV behavior of SiC JBS diodes. For the first time, modeling of leakage current for JBS diode in circuit simulation is done. The model includes temperature scaling of its parameters to enable modeling of the diodes over a wide range of temperature (25 °C to 175 °C). The model has been validated using characterization data from a 1200 V, 3 A SiC JBS diode from GeneSiC. Excellent agreement is shown between device measurements and simulation for all regimes of operation of the diode.
ISSN:1093-5142
DOI:10.1109/COMPEL.2013.6626467