Electrical Comparison of and Gate Dielectrics on GaN

A low-temperature atomic layer deposition technique for high-κ dielectric films on GaN templates was investigated for MOS applications. This improved growth method produced capacitance densities and a field effect mobility approaching 375 cm 2 /Vs for ZrO 2 and 250 cm 2 /Vs for HfO 2 films on GaN. F...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-12, Vol.60 (12), p.4119-4124
Main Authors: Bothe, Kyle M., von Hauff, Peter A., Afshar, Amir, Foroughi-Abari, Ali, Cadien, Kenneth C., Barlage, Douglas W.
Format: Article
Language:English
Subjects:
Atomic layer deposition (ALD)
Capacitance
Dielectric measurement
Dielectrics
Gallium nitride
GaN MOS
Hafnium compounds
high- kappa dielectric
interface traps
Logic gates
mobility
MOS capacitors (MOSCAP)
Scattering
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Summary:A low-temperature atomic layer deposition technique for high-κ dielectric films on GaN templates was investigated for MOS applications. This improved growth method produced capacitance densities and a field effect mobility approaching 375 cm 2 /Vs for ZrO 2 and 250 cm 2 /Vs for HfO 2 films on GaN. Furthermore, the low density of dielectric-semiconductor interface traps confirmed a reliable cohesion between the high-κ and GaN. The improved gate dielectric deposition technique has the capabilities to improve the overall quality of GaN-based MOSFETs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2283802