Temperature-Compensated High-Frequency Surface Acoustic Wave Device

We report high-frequency surface acoustic wave (SAW) devices with excellent temperature stability using a layered structure consisting of single-crystal LiNbO 3 thin film on SiO 2 /LiNbO 3 substrate. SAW devices with a wavelength of 2 μm have been fabricated and several wave modes ranging from ~ 1.5...

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Bibliographic Details
Published in:IEEE electron device letters 2013-12, Vol.34 (12), p.1572-1574
Main Authors: Changjian Zhou, Yi Yang, Hualin Cai, Tian-Ling Ren, Mansun Chan, Yang, Cary Y.
Format: Article
Language:English
Subjects:
Acoustic wave devices, piezoelectric and piezoresistive devices
Applied sciences
Electronics
Exact sciences and technology
Lithium niobate
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
surface acoustic wave (SAW)
Surface acoustic wave devices
Surface acoustic waves
temperature compensation
Thin films
{\rm LiNbO}_{3} thin film
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Description
Summary:We report high-frequency surface acoustic wave (SAW) devices with excellent temperature stability using a layered structure consisting of single-crystal LiNbO 3 thin film on SiO 2 /LiNbO 3 substrate. SAW devices with a wavelength of 2 μm have been fabricated and several wave modes ranging from ~ 1.5 to 2.1 GHz have been obtained. With the SiO 2 interlayer providing the temperature compensation and the top single-crystal Z-cut LiNbO 3 piezoelectric thin film for acoustic wave excitation, the fabricated SAW devices exhibit excellent temperature coefficients of frequency. Theoretical calculations are presented to elucidate temperature compensation of the proposed layered structure.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2283305