Graphene base hot electron transistors with high on/off current ratios

Despite exceptional intrinsic properties of graphene, field effect transistors with graphene channels (GFETs) are limited by the absence of an electronic band gap. The resulting low I ON -I OFF ratio and low output resistance makes GFETs unsuitable for logic applications [1] and limits radio frequen...

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Bibliographic Details
Main Authors: Vaziri, Sam, Lupina, Grzegorz, Smith, Anderson D., Dabrowski, Jarek, Lippert, Gunther, Mehr, Wolfgang, Ostling, Mikael, Lemme, Max C.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum oxide
Educational institutions
Graphene
Performance evaluation
Photonic band gap
Radio frequency
Transistors
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Summary:Despite exceptional intrinsic properties of graphene, field effect transistors with graphene channels (GFETs) are limited by the absence of an electronic band gap. The resulting low I ON -I OFF ratio and low output resistance makes GFETs unsuitable for logic applications [1] and limits radio frequency (RF) applications [2]. We will present a graphene-based electronic device in which the 0 eV band gap does not limit the device performance: a hot electron transistor (HET) with a graphene base (Graphene Base Transistor, GBT) [3,4]. The single-atomic thinness and high conductivity are decisive advantages of a graphene base [5]. Here, we report on the fabrication and full DC-characterization of GBTs with high I ON -I OFF ratio of 10 5 .
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2013.6633784