Plasmonic terahertz wave detector based on silicon field-effect transistors with asymmetric source and drain structures

In this letter, we report the experimental demonstrations of the enhanced responsivity in Si metal-oxide-semiconductor (MOS) FET-based plasmonic THz detector [2, 3] with asymmetric source and drain region considering the device width variations.

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Bibliographic Details
Main Authors: Min Woo Ryu, Kibog Park, Wook-Ki Park, Seong-Tae Han, Kyung Rok Kim
Format: Conference Proceeding
Language:English
Subjects:
Bonding
Detectors
Gyrotrons
Logic gates
Plasmons
Silicon
Wires
Online Access:Request full text
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Description
Summary:In this letter, we report the experimental demonstrations of the enhanced responsivity in Si metal-oxide-semiconductor (MOS) FET-based plasmonic THz detector [2, 3] with asymmetric source and drain region considering the device width variations.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2013.6633811