Plasmonic terahertz wave detector based on silicon field-effect transistors with asymmetric source and drain structures

In this letter, we report the experimental demonstrations of the enhanced responsivity in Si metal-oxide-semiconductor (MOS) FET-based plasmonic THz detector [2, 3] with asymmetric source and drain region considering the device width variations.

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Main Authors: Min Woo Ryu, Kibog Park, Wook-Ki Park, Seong-Tae Han, Kyung Rok Kim
Format: Conference Proceeding
Language:English
Subjects:
Bonding
Detectors
Gyrotrons
Logic gates
Plasmons
Silicon
Wires
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creator Min Woo Ryu
Kibog Park
Wook-Ki Park
Seong-Tae Han
Kyung Rok Kim
description In this letter, we report the experimental demonstrations of the enhanced responsivity in Si metal-oxide-semiconductor (MOS) FET-based plasmonic THz detector [2, 3] with asymmetric source and drain region considering the device width variations.
doi_str_mv 10.1109/DRC.2013.6633811
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source IEEE Xplore All Conference Series
subjects Bonding
Detectors
Gyrotrons
Logic gates
Plasmons
Silicon
Wires
title Plasmonic terahertz wave detector based on silicon field-effect transistors with asymmetric source and drain structures
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