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Layout-aware, distributed, compact model for multi-finger MOSFETs operating under ESD conditions
This work presents a scalable, distributed model for multi-finger MOSFETs operating under ESD conditions. A three-terminal transmission line pulsing measurement technique enables the model parameter extraction. The distributed model can reproduce trigger voltage, on-state resistance, and non-uniform...
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Main Authors: | , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | This work presents a scalable, distributed model for multi-finger MOSFETs operating under ESD conditions. A three-terminal transmission line pulsing measurement technique enables the model parameter extraction. The distributed model can reproduce trigger voltage, on-state resistance, and non-uniform turn-on effect as functions of layout geometries. |
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ISSN: | 0739-5159 2164-9340 |