On Monolayer Field-Effect Transistors at the Scaling Limit

• Published in: IEEE transactions on electron devices 2013-12, Vol.60 (12), p.4133-4139
• Main Authors: Liu, Leitao, Lu, Yang, Guo, Jing
• Format: Article
• Language: English
• Subjects: Double-gate field-effect transistors (FETs); Field effect transistors; Logic gates; monolayer molybdenum disulfide {\rm MoS}_{{2}}; performance metrics; phonon scattering; Phonons; Scattering; Silicon; Tunneling; ultimate scaling limit
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2013.2284591

The ultimate scaling limit of double-gate molybdenum disulfide (MoS 2 ) field-effect transistors (FETs) with a monolayer thin body is examined and compared with ultrathin-body Si FETs by self-consistent quantum transport simulation in the presence of phonon scattering. Modeling of phonon scattering, quantum mechanical effects, and self-consistent electrostatics allows us to accurately assess the performance potential of monolayer MoS 2 FETs. The results revealed that monolayer MoS 2 FETs show 52% smaller drain-induced barrier lowering (DIBL) and 13% smaller subthreshold swing (SS) than 3-nm-thick-body Si FETs at a channel length of 10 nm with the same gating. With a requirement of DIBL , the scaling limit of monolayer MoS 2 FETs is assessed to be 8 nm, comparing with 10 nm of the ultrathin-body Si counterparts due to the monolayer thin body and higher effective mass, which reduces direct source-to-drain tunneling. By comparing with the international technology roadmap for semiconductor (ITRS) target for high performance logic devices of 2023; double-gate monolayer MoS 2 FETs can fulfill the ITRS requirements.