Electrically-driven metal-insulator transition of VO2 thin films in a nanoscale metal-oxide-metal device structure

We report the growth of vanadium dioxide (VO 2 ) films on metal electrode with a thin SiO 2 buffer and the fabrication of nanoscale metal-oxide-metal junction. The thermal-induced metal-insulator transition with a change of resistance of 2 orders of magnitude is observed and the threshold voltage is...

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Bibliographic Details
Main Authors: Dong-Hong Qiu, Qi-Ye Wen, Qing-Hui Yang, Zhi Chen, Yu-Lan Jing, Huai-Wu Zhang
Format: Conference Proceeding
Language:English
Subjects:
Educational institutions
Electrical switching characteristics
Electrodes
Junctions
Metal-insulator transition
Metal-oxide-metal junction
Nanoscale devices
Optical switches
Silicon
Vanadium dioxide
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Summary:We report the growth of vanadium dioxide (VO 2 ) films on metal electrode with a thin SiO 2 buffer and the fabrication of nanoscale metal-oxide-metal junction. The thermal-induced metal-insulator transition with a change of resistance of 2 orders of magnitude is observed and the threshold voltage is as low as 1.6V.
DOI:10.1109/UCMMT.2013.6641563