Applications of crystalline Indium-Gallium-Zinc-Oxide technology to LSI: Memory, processor, image sensor, and field programmable gate array

Crystalline In-Ga-Zn Oxide (IGZO) including c-axis aligned crystal (CAAC) enables FETs to show high reliability and extremely low off-state current. CAAC-IGZO technology is expected to grow to main technology of next-generation displays and is already contributing to mass-production of liquid crysta...

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Main Authors: Kurokawa, Yoshiyuki, Okamoto, Yuki, Nakagawa, Takashi, Aoki, Takeshi, Ikeda, Masataka, Kozuma, Munehiro, Osada, Takeshi, Ikeda, Takayuki, Yamade, Naoto, Okazaki, Yutaka, Miyairi, Hidekazu, Fujita, Masahiro, Koyama, Jun, Yamazaki, Shunpei
Format: Conference Proceeding
Language:English
Subjects:
c-axis aligned crystal
CAAC
CAAC-IGZO
CMOS integrated circuits
crystalline In-Ga-Zn-O
Field effect transistors
field programmable gate array
Field programmable gate arrays
FPGA
hybrid process
IGZO
image sensor
In-Ga-Zn-O
Logic gates
memory
Nonvolatile memory
oxide semiconductor
processor
Random access memory
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Summary:Crystalline In-Ga-Zn Oxide (IGZO) including c-axis aligned crystal (CAAC) enables FETs to show high reliability and extremely low off-state current. CAAC-IGZO technology is expected to grow to main technology of next-generation displays and is already contributing to mass-production of liquid crystal displays. In this paper by focusing on a very important feature of CAAC-IGZO FET, extremely low off-state current, its pioneering various applications to LSI are reviewed and discussed. In particular, a success in development of a hybrid process of CMOS FETs and CAAC-IGZO FETs promotes our developments of novel memories, processors, image sensors, and recently, field programmable gate arrays (FPGA).
DOI:10.1109/ASQED.2013.6643566