Germanium waveguides on lateral silicon-on-insulator diodes for monolithic light emitters and photo detectors

We fabricated germanium waveguides on lateral silicon-on-insulator diodes for monolithic integrated light emitters and photo detectors. The fabricated devices show enhanced light emission properties and photo detection properties, namely, a dark current of 2 nA.

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Bibliographic Details
Main Authors: Tani, Kazuki, Oda, Katsuya, Kasai, Jun-ichi, Okumura, Tadashi, Mine, Toshiyuki, Saito, Shin-ichi, Ido, Tatemi
Format: Conference Proceeding
Language:English
Subjects:
Dark current
Detectors
Light emitting diodes
Optical interconnections
Optical waveguides
Photonic band gap
Silicon-on-insulator
Online Access:Request full text
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Description
Summary:We fabricated germanium waveguides on lateral silicon-on-insulator diodes for monolithic integrated light emitters and photo detectors. The fabricated devices show enhanced light emission properties and photo detection properties, namely, a dark current of 2 nA.
ISSN:1949-2081
1949-209X
DOI:10.1109/Group4.2013.6644407