Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications

Two C-band monolithic high power amplifiers (HPAs) have been designed and implemented exploiting a 0.25-μm AlGaN/GaN HEMT process on an SiC substrate. The circuits have been designed for use in transmit/recevie modules of satellite synthetic aperture radar antennas for Earth observation. The design...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2013-12, Vol.61 (12), p.4492-4504
Main Authors: Florian, Corrado, Cignani, Rafael, Santarelli, Alberto, Filicori, Fabio
Format: Article
Language:English
Subjects:
AlGaN/GaN HEMT
Circuits
Design engineering
Foundries
Gain
Gallium nitride
Gallium nitrides
HEMTs
High electron mobility transistors
high power amplifier (HPA)
high-efficiency power amplifiers
MMIC (circuits)
MMICs
monolithic microwave integrated circuit (MMIC)
Power amplifiers
Semiconductor devices
Space applications
Synthetic aperture radar
synthetic aperture radars (SARs)
Temperature measurement
Thermal resistance
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Summary:Two C-band monolithic high power amplifiers (HPAs) have been designed and implemented exploiting a 0.25-μm AlGaN/GaN HEMT process on an SiC substrate. The circuits have been designed for use in transmit/recevie modules of satellite synthetic aperture radar antennas for Earth observation. The design was accurately focused on the HEMTs' electrical and thermal working conditions in order to guarantee the reliable operation required by space applications. The HPAs operate in pulsed conditions with typical pulsewidth of 50 μs and 10% duty cycle: in that regime, the circuits deliver about 40 W with more than 21-dB associated gain and 40% to 45% power-added efficiency in the 5-5.8-GHz band. The achieved performance clearly demonstrates the very high potentiality of this technology for the replacement of GaAs-based HPAs in new generations of this type of systems .
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2013.2286109