Compact modeling for application-specific high-sigma worst case

A high-sigma corner model derived from Monte Carlo simulation with a novel sampling algorithm is presented. Compared with the traditional Monte Carlo simulation approach, the simulation effort and computational resource is greatly reduced. This methodology can be applied to create application-specif...

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Bibliographic Details
Main Authors: Hsuan-Han Wang, Yi-Ling Chen, Chang-Chieh Yang, Chung-Kai Lin, Min-Chie Jeng
Format: Conference Proceeding
Language:English
Subjects:
compact model
high sigma
Integrated circuit modeling
Monte Carlo methods
Monte Carlo simulation
Predictive models
Semiconductor process modeling
Solid modeling
SRAM cells
SRAM simulation
statistical model
worst case model
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Description
Summary:A high-sigma corner model derived from Monte Carlo simulation with a novel sampling algorithm is presented. Compared with the traditional Monte Carlo simulation approach, the simulation effort and computational resource is greatly reduced. This methodology can be applied to create application-specific corner model for different design spec leading to more competitive designs.
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2013.6650574