Density Gradient calibration for 2D quantum confinement: Tri-Gate SOI transistor application

• Main Authors: Pons, N., Triozon, F., Jaud, M.-A, Coquand, R., Martinie, S., Rozeau, O., Niquet, Y.-M, Nguyen, V.-H, Oudrhiri, A. Idrissi-El, Barraud, S.
• Format: Conference Proceeding
• Language: English
• Subjects: Calibration; Charge carrier processes; crystal orientations; Density-Gradient; Logic gates; Numerical models; Potential well; Schrödinger-Poisson; Solid modeling; Transistors; Tri-Gate
• ISSN: 1946-1569; 1946-1577
• DOI: 10.1109/SISPAD.2013.6650605

This article presents a Density-Gradient (DG) calibration for 2D quantum confinement on Tri-Gate Silicon on insulator cross section for which the top gate interface is -oriented and the lateral gate interfaces are -oriented. To calibrate the DG model, we use self-consistent Poisson-Schrödinger calculations and fit the capacitance vs gate voltage (C-V) curves. We first calibrate DG model for one-dimensional quantum confinement (1D) on planar devices cross section for both crystal orientations. Then, we check the validity of the parameters obtained for the two-dimensional (2D) quantum confinement on tri-gate architecture cross-section. The DG model allows a good description of the C-V curves in the case of 2D quantum confinement and the parameters are still valid when we reduce the Tri-Gate cross section up to 4 nm by side.