Experimental Demonstration of Negative Index of Refraction in Magnetic Semiconductors

Homogeneous negative index materials have been introduced as an alternative to conventional metamaterials designs. Based on direct experimental evidence, we demonstrate that the magnetic semiconductor, Cr-doped indium oxide, possesses a negative refractive index near 28.0 μm. This effect is based on...

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Bibliographic Details
Published in:IEEE transactions on terahertz science and technology 2013-11, Vol.3 (6), p.791-797
Main Authors: Ait-El-Aoud, Yassine, Kussow, Adil-Gerai, Jaradat, Hamzeh M., Akyurtlu, Alkim
Format: Article
Language:English
Subjects:
Chromium-doped indium oxide
magnetic semiconductor
Magnetic separation
Metamaterials
mid-IR
negative index materials
Refractive index
Semiconductor device measurement
Temperature measurement
Wavelength measurement
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Summary:Homogeneous negative index materials have been introduced as an alternative to conventional metamaterials designs. Based on direct experimental evidence, we demonstrate that the magnetic semiconductor, Cr-doped indium oxide, possesses a negative refractive index near 28.0 μm. This effect is based on the coexistence of the magnon mode with the plasmonic mode, with simultaneous negative permeability and permittivity responses. Thin films of In 2-x Cr x O 3 are fabricated, and the magnetic measurements clearly demonstrate ferromagnetism with a high saturation magnetization and a Curie temperature which is much higher than room temperature. The refractive index is extracted from combined transmittance and reflectance data and is compared with the theoretical prediction. Moreover, a direct experimental method is used to demonstrate negative refraction in this material.
ISSN:2156-342X
2156-3446
DOI:10.1109/TTHZ.2013.2285554