Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs

This paper presents the first integrated temperature sensor in a SiC power mosfet. An analytical model has been proposed to assess its behavior up to 300°C. We present the tested design and its advantages compared to other solutions. We also propose possible optimizations in order to simplify it and...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2014-09, Vol.29 (9), p.4970-4977
Main Authors: Berthou, Maxime, Godignon, Philippe, Millan, Jose
Format: Article
Language:English
Subjects:
Applied sciences
Calibration
Conductivity
Design optimization
Design. Technologies. Operation analysis. Testing
Devices
Electronics
Exact sciences and technology
General equipment and techniques
Impurities
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Integrated circuits
Mathematical analysis
Mathematical models
Monolithic integrated sensor
MOSFET
MOSFETs
Optimization
Other multijunction devices. Power transistors. Thyristors
p-type SiC
Physics
power mosfet
Resistance
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors
Sensors (chemical, optical, electrical, movement, gas, etc.)
remote sensing
Silicon carbide
Switches
Temperature
Temperature dependence
temperature sensor
Temperature sensors
Transistors
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Summary:This paper presents the first integrated temperature sensor in a SiC power mosfet. An analytical model has been proposed to assess its behavior up to 300°C. We present the tested design and its advantages compared to other solutions. We also propose possible optimizations in order to simplify it and reduce its size. 2.25 mm 2 power mosfets have been fabricated with and without temperature sensor. Measurements show that the temperature sensor does not impact the power mosfet characteristics and its integration does not demand supplementary process steps. To demonstrate the functionality of our integrated sensor, we have calibrated the temperature dependence of its resistance to assess the internal temperature of the device at different bias.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2013.2289013