Specific Characterization for Destructive Single Event Effects on GaAs Power P-HEMT MMIC

Specific Single Event Effects characterization based on RF and worst case DC conditions are used to demonstrate that two European GaAs power P-HEMT MMIC processes are safe under heavy ions.

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Bibliographic Details
Main Authors: Marec, R., Bensoussan, A., Muraro, J. L., Portal, L., Calvel, P., Barillot, C., Perichaud, M. G., Marchand, L., Vignon, G.
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
Ions
Logic gates
MESFETs
MMICs
Radio frequency
Stress
Online Access:Request full text
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Description
Summary:Specific Single Event Effects characterization based on RF and worst case DC conditions are used to demonstrate that two European GaAs power P-HEMT MMIC processes are safe under heavy ions.
ISSN:2154-0519
2154-0535
DOI:10.1109/REDW.2013.6658216