A 1 V bulk-controlled gm-boosted CMOS mixer for LTE-A applications

A 1 V 1.4 ~ 3.6 GHz high linearity CMOS mixer for LTE-A applications is presented. The transconductor stage of the mixer adopts bulk-controlled, g m -boosted, and current-reuse techniques to improve the conversion gain and linearity for low voltage operation. The mixer features the maximum power con...

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Bibliographic Details
Main Authors: Hung-Che Wei, Chih-Lung Hsiao
Format: Conference Proceeding
Language:English
Subjects:
CMOS integrated circuits
Computer architecture
Gain
Linearity
Mixers
Noise measurement
Radio frequency
Online Access:Request full text
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Description
Summary:A 1 V 1.4 ~ 3.6 GHz high linearity CMOS mixer for LTE-A applications is presented. The transconductor stage of the mixer adopts bulk-controlled, g m -boosted, and current-reuse techniques to improve the conversion gain and linearity for low voltage operation. The mixer features the maximum power conversion gain of 12.3 dB, input third-order intercept point of 4.8 dBm, and the minimum single sideband noise figure of 16.9 dB. The DC supply voltage can be scaled down to 1 V with the mixer core current consumption of 4.6 mA.
ISSN:2378-8143
2693-0854
DOI:10.1109/GCCE.2013.6664811