Accurate Capacitance Modeling and Characterization of Organic Thin-Film Transistors

• Published in: IEEE transactions on electron devices 2014-01, Vol.61 (1), p.98-104
• Main Authors: Zaki, Tarek, Scheinert, Susanne, Horselmann, Ingo, Rodel, Reinhold, Letzkus, Florian, Richter, Harald, Zschieschang, Ute, Klauk, Hagen, Burghartz, Joachim N.
• Format: Article
• Language: English
• Subjects: Admittance measurement; Capacitance; channel capacitance; device modeling and simulation; Frequency measurement; Logic gates; Organic thin film transistors; Semiconductor device measurement; Transmission line measurements
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2013.2292390

This paper presents analysis of the charge storage behavior in organic thin-film transistors (OTFTs) by means of admittance characterization, compact modeling, and 2-D device simulation. The measurements are performed for frequencies ranging from 100 Hz to 1 MHz and bias potentials from zero to -3 V on top-contact OTFTs that employ air-stable and high-mobility dinaphtho-thieno-thiophene as the organic semiconductor. It is demonstrated that the dependence of the intrinsic OTFT gate-source and gate-drain capacitances on the applied voltages agrees very well with Meyer's capacitance model. Furthermore, the impact of parasitic elements, including fringe current and contact impedance, is investigated. The parameters used for the simulation and modeling of all the dynamic characteristics correspond closely to those extracted from static measurements. Finally, the implications of the admittance measurements are also discussed relating to the OTFTs dynamic performance, particularly the cutoff frequency and the charge response time.